History

A technology partnership is formed with Nissin Electric Co., Ltd. And HVEE (High Voltage Engineering Europe).

Production of ion implanter began.

200-kV medium-current ion implanter is developed.

Western Electric (now AT&T) technology is adopted for 30-kV high-current ion implanters.

The NC-20C, a 200-kV medium-current ion implanter (with belt conveyor end station), is developed.

The PR-200, a 200-kV high-current ion implanter, is developed.

The Ion Equipment Division is established.

The NH-20SD, a fully-automatic, dual end station for the NH-20S medium-current ion implanter, is released.

The PR-80, an 80-kV high-current ion implanter, is released.

Production moves to the new Kuze Plant, and the rotational implantation end station is developed.

The NH-20SR, a new medium-current ion implanter, is released.

The PR-80A, a new high-current ion implanter, and the NH-20SDR, a new dual end station, are released.
The ion implanter business for manufacturing Flat Panel Display is launched.

The NH-20SP, an 8-inch parallel beam medium-current ion implanter, is developed.
Deliveries of the NH-40SR, a 400-kV medium-current ion implanter for mass production, is delivered.

The first ion implanter (ion doping machine) for manufacturing low-temperature polycrystalline silicon TFT (LTPS-TFT) displays is delivered.

The EXCEED8000, an 8-inch high-current ion implanter, is developed.

The company receives the Ichimura Industrial Award for its medium-current ion implanter with a rotating implantation mechanism.

The EXCEED2000, a new medium-current ion implanter, is developed.
The NH-50SR, a 500-kV medium-current ion implanter for mass production, is developed.

Full-scale deliveries of ion implanters (ion doping machines) for manufacturing LTPS-TFT displays are commenced.

Nissin Electric Europe Limited is established in the UK (Scotland).

The EXCEED2000A, an updated 8-inch parallel beam medium-current ion implanter, is developed and released.
Deliveries of the ID5600 and ID6700 ion implanters (ion doping machines) for manufacturing LTPS-TFT displays are commenced.

Customer evaluations of the EXCEED2300, an ion implanter for 300mm wafers, are commenced.
Production control transferred from Nissin Electric Co., Ltd., and Nissin Ion Equipment Co., Ltd. is established.

Deliveries of the EXCEED2300, an ion implanter for mass production of 300mm wafers, are commenced.

Nissin Allis Union Ion Equipment Co., Ltd., a joint venture company, is established in Taiwan.
A representative office is established in Shanghai, China.

Nissin Ion Korea Co., Ltd., a subsidiary company, is established in South Korea.
Nissin Allis Ion Equipment (Shanghai) Co., Ltd., a subsidiary company, is established in Shanghai, China.
The Nissin Ion Equipment Co., Ltd. Singapore Branch is established.

Capital increased from 490 to 1,500 million yen.

The EXCEED3000AH, a new ion implanter for 300mm wafers, is released.
Deliveries of the iG4, a new ion implanter for manufacturing LTPS-TFT displays with 4.5th-generation substrate size (730 mm × 920 mm), are commenced.

The Shiga Plant / Plasma Technology R&D Center is established in Koka city, Shiga Prefecture.
Sales rights related to production control are transferred from Nissin Electric Co., Ltd.

The EXCEED9600A, an ion implanter for 300mm wafers with an implantation energy range expanded to a maximum of 960 KeV, is released.

The CLARIS, a hybrid ion implanter that utilizes the world’s first cluster ion beam, is released.

Nissin Ion Equipment USA, Inc. is established as a wholly-owned subsidiary in Texas, USA.
Deliveries of the IMPHEAT, a high-temperature implanter for power semiconductors, are commenced.

• Nissin Ion Hightech (Yangzhou) Co., Ltd. is established as a wholly-owned production subsidiary in Yangzhou, Jiangsu Province, China.
• The iG5, the world’s first ion implanter for manufacturing LTPS-TFT displays with 5.5th-generation substrate size (1,300 mm × 1,500 mm), is developed and delivered.
• The iG6, the world’s first ion implanter for manufacturing LTPS-TFT displays with 6th-generation substrate size (1,500 mm × 1,800 mm), is developed and delivered.
• Building No. 2 is added at the Shiga Plant.
• The R&D Center is established at Nissin Ion Equipment USA, Inc., (a subsidiary in the US), and a business center is established in Boston, Massachusetts, USA.

Deliveries of the BeyEX(-H), an ion implanter for semiconductor, is commenced.
Deliveries of the EXCEED3000AH-8C, an ion implanter for semiconductors, are commenced.

Building No. 3 is added at the Shiga Plant.

Deliveries of the EXCEED400HY, a hydrogen implanter for VCSELs, is commenced.

The IMPHEAT-II, a new high-temperature implanter for power semiconductors, is developed.

An office building is added at the Shiga Plant.
Relocated a function of head office to Toji Office.