Corporate Profile

Company History

Company History

1973 Technical cooperation between Nissin Electric Co., Ltd. and HVEE (High Voltage Engineering Europe) commenced
1974 Production of ion implanter began
1978 200-kV medium current ion implanter developed
1980 Western Electric (current AT&T) 30-kV high current ion implanter technology incorporated
1981 "NH-20C", a 200-kV medium current ion implanter (belt conveyor end station), developed
1982 "PR-200", a 200-kV high current ion implanter, developed
1983 Ion Equipment Division established
1984 "NH-20SD", a fully-automatic, dual end station for the "NH-20S" medium current ion implanter, released
1985 "PR-80", a 80-kV high current ion implanter, released
1986 Kuze Factory established and moved, and rotational implant end station developed
1987 "NH-20SR", a new-type medium current ion implanter, released
1988 "PR-80A", a new-type high current ion implanter, and "NH-20SDR", a new-type dual end station, released
Ion implanter business for manufacturing low-temperature poly-Silicon TFT(LTPS-TFT) displays begun
1989 "NH-20SP", an 8-inch parallel beam, medium current ion implanter, developed
"NH-40SR", a 400-kV medium current ion implanter for mass production, delivered
1990 The first ion implanter for manufacturing LTPS-TFT displays (ION DOPING®) delivered 
1991 "EXCEED8000", an 8-inch high current ion implanter, developed
1993 "Ichimura Industrial Award" received for medium current ion implanter with a rotational implant mechanism 
1994 "EXCEED2000", a new-type medium current ion implanter, developed
"NH-50SR", a 500-kV medium current ion implanter for mass production, developed 
1996 Delivery of ion implanter for manufacturing LTPS-TFT displays (ION DOPING®) commenced
1997 Nissin Electric Europe Limited established in Scotland
1998 "EXCEED2000A", an improved-type 8-inch parallel medium current ion implanter, released
Delivery of "ID5600" and "ID6700", an ion implanter for manufacturing LTPS-TFT displays (ION DOPING®), commenced
1999 Customer evaluation of the "EXCEED2300" ion implanter for 300-mm wafers commenced 
Production control transferred from Nissin Electric Co., Ltd., and Nissin Ion Equipment Co., Ltd. established
2000 Delivery of "EXCEED2300", an ion implanter for mass production of 300-mm wafers, commenced
2001 Nissin Allis Union Ion Equipment Co., Ltd., a joint corporation, established in Taiwan
Representative office established in Shanghai, China
2002 Nissin Ion Korea Co., Ltd., a joint corporation, established in South Korea
Nissin Allis Ion Equipment (Shanghai) Co., Ltd., a joint corporation, established in Shanghai, China
Nissin Ion Equipment Co., Ltd. Singapore Branch established
2003 Capital increased from 490 to 1,500 million yen
2004 "EXCEED3000AH", a new-type ion implanter for 300-mm wafers, released
Delivery of "iG4", an ion implanter for the manufacture of 4th-generation glass size (550'670 mm) LTPS-TFT displays, commenced
2005 Shiga Plant/Plasma Technology R&D Center established in Koka City (Shiga Pref.).
Sales rights in connection with production control transferred from Nissin Electric Co., Ltd. 
2007 "EXCEED9600A", an ion implanter for 300-mm wafers with implantation energy range expanded to 960 KeV, released
2008 "CLARIS", a hybrid-type ion implanter using the world's first cluster ion beam, released
2010 Nissin Ion Equipment USA, Inc. established as a wholly-owned subsidiary in Texas, U.S.A.
2011 Nissin Ion Hightech (Yangzhou) Co., Ltd. established as a wholly-owned production subsidiary in Yangzhou, Jiangsu Province, China
"iG5", the world's first ion implanter for manufacturing 5.5th-generation glass size (1300 ' 1500 mm) LTPS-TFT displays, developed and delivered
"iG6", the world's first ion implanter for manufacturing 6th-generation glass size (1500 ' 1800 mm) LTPS-TFT displays, developed and delivered
No. 2 building added to the Shiga Plant
R&D Center established at Nissin Ion Equipment USA, Inc., (a subsidiary in the U.S.) and a base established in Boston, Massachusetts, U.S.A.

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