イオン注入の国際会議（IIT2024)で下記の論文を発表します。
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基調講演
・Japanese Equipment Manufactures Contribution to Ion Implantation for Semiconductor Device Fabrication
by Nobuo Nagai
オーラル発表
・IMPHEAT-Ⅱ：In-Situ XRD System, Enhancement of Implantation Angle Accuracy through Per-Wafer Measurement of Off-Axis Angle for Channeling Implantation
by Yuya Hirai
・IMPHEAT-II：A novel Ion Source with Extended Lifetime and Wide Beam Current Dynamic Range for SiC Power Device Mass Production
by Yuta Iwanami
・High Current Metal Ion Source for Material Modification in the Semiconductor Manufacturing Processes
by Takeshi Matsumoto
・Molecular Ion Beam Current Enhancement by Noble Gas Mixed Discharge.
by Naoki Miyamoto
・Machine Learning Based Beam Shape Controlling System on NISSIN Medium Current Ion Implanter
by Shinya Takemura
ポスター発表
・Ion Doping System iG8 for Generation 8 Flat-Panel Display Industry
by Kazuki Kawase
・New Operation Method for Ion Source Parameters to Improve Single Ionization Efficiency
by Hiroaki Kai
・Space Charge Neutralization System for Low-Energy High-Current Implanter
by Taido Kurauchi
・Effect of Gas Introduction for Beam Neutralization on Beam Transport for Different Ion Species
by Yusuke Kuwata