Ion implanter for semiconductor manufacturing
IMPHEAT-II
A high-temperature ion implanter with even more advanced high-temperature transport reliability and throughput than the IMPHEAT.
Merit
This high-temperature ion implanter offers the industry’s highest productivity. It can perform aluminum (Al) implantation for SiC power devices.
- Handles a temperature range from room temperature to 500°C.
- The world’s highest throughput at high-temperature implantation
- The high-current Al⁺ beam boosts productivity.
- Available wafer size: 4/6/8 inches
Developed using EXCEED, a product with a proven track record, as its base.
- High reliability
- Common maintenance parts
