Nissin Ion Equipment Co., Ltd. has earned Best Poster Paper Award in iMiD 2024.
We presented research results on the characteristics of boron ion
implantation in oxide semiconductor InGaZnO (IGZO) thin film transistor
(TFT) at the international conference in Korea, where technologies and
materials related to flat panel displays (FPDs) are reported.
In this study, we investigated the carrier generation ratio in IGZO and
reported the possibility of good microfabrication ability by boron
ion implantation.
We will continue to collect data and apply ion implantation technology
on oxide semiconductors to contribute to the development of our
customers and the realization of a sustainable society.
【iMiD 2024】
Date: August 20 (Tue.)- 23 (Fri.), 2024
Location: Jeju island, Korea
Organizer:
・ The Korean Information Display Society (KIDS)
・ The Society for Information Display (SID)
【Terminology】
・InGaZnO (IGZO)
Abbrevitation of oxide semiconductor, consist of Indium (In),
Gallium (Ga), Zinc (Zn), and Oxygen (O)
・Thin Film Transistor (TFT)
A transistor made using a semiconductor thin film, manufactured on
an insulating film substrate such as glass or film, and used for liquid
crystal (LC) and organic light emitting diode (OLED).
【Related Awards】
Best Paper Award in AM-FPD ’20
Poster Paper Award in AM-FPD ’21