{"id":1541,"date":"2024-09-28T16:28:00","date_gmt":"2024-09-28T07:28:00","guid":{"rendered":"https:\/\/www.nissin-ion.co.jp\/en\/?p=1541"},"modified":"2024-11-22T16:37:30","modified_gmt":"2024-11-22T07:37:30","slug":"nissin-ion-equipment-earns-best-poster-paper-award-in-internationalmeeting-information-display-2024-imid-2024","status":"publish","type":"post","link":"https:\/\/www.nissin-ion.co.jp\/en\/event-news\/news\/nissin-ion-equipment-earns-best-poster-paper-award-in-internationalmeeting-information-display-2024-imid-2024\/","title":{"rendered":"Nissin Ion Equipment Earns Best Poster Paper Award in InternationalMeeting Information Display 2024 (iMiD 2024)"},"content":{"rendered":"\n

Nissin Ion Equipment Co., Ltd. has earned Best Poster Paper Award in iMiD 2024.
We presented research results on the characteristics of boron ion
implantation in oxide semiconductor InGaZnO (IGZO) thin film transistor
(TFT) at the international conference in Korea, where technologies and
materials related to flat panel displays (FPDs) are reported.<\/p>\n\n\n\n

In this study, we investigated the carrier generation ratio in IGZO and
reported the possibility of good microfabrication ability by boron
ion implantation.
We will continue to collect data and apply ion implantation technology
on oxide semiconductors to contribute to the development of our
customers and the realization of a sustainable society.<\/p>\n\n\n\n

\"\"
\u3000\u3000\u3000\u3000\u3000\u3000\u3000\u3000\u3000\u3000\u3000\u3000\u3000\u3000\u3000\u3000\u3000\u3000\u3000\u3000Certificate<\/strong><\/figcaption><\/figure>\n\n\n\n

\u3010iMiD 2024\u3011<\/a>
Date: August 20 (Tue.)- 23 (Fri.), 2024
Location: Jeju island, Korea
Organizer:
\u30fb The Korean Information Display Society (KIDS)
\u30fb The Society for Information Display (SID)<\/p>\n\n\n\n

\u3010Terminology\u3011
\u30fbInGaZnO (IGZO)
\u3000\u3000Abbrevitation of oxide semiconductor, consist of Indium (In),
\u3000\u3000Gallium (Ga), Zinc (Zn), and Oxygen (O)<\/p>\n\n\n\n

\u30fbThin Film Transistor (TFT)
\u3000\u3000A transistor made using a semiconductor thin film, manufactured on
\u3000\u3000an insulating film substrate such as glass or film, and used for liquid
\u3000\u3000crystal (LC) and organic light emitting diode (OLED).<\/p>\n\n\n\n

\u3010Related Awards\u3011
Best Paper Award in AM-FPD ’20<\/a>
Poster Paper Award in AM-FPD ’21<\/a><\/p>\n\n\n\n

<\/p>\n","protected":false},"excerpt":{"rendered":"

Nissin Ion Equipment Co., Ltd. has earned Best Poster Paper Award in iMiD 2024.We presented research results on the characteristics of boron ionimplantation in oxide semiconductor InGaZnO (IGZO) thin film transistor(TFT) at the international conference in Korea, where technologies andmaterials related to flat panel displays (FPDs) are reported. In this study, we investigated the carrier generation ratio in IGZO andreported the possibility of good microfabrication ability by boronion implantation.We will continue to collect data and apply ion implantation technologyon oxide semiconductors to contribute to the development of ourcustomers and the realization of a sustainable society. \u3010iMiD 2024\u3011Date: August 20 (Tue.)- 23 (Fri.), 2024Location: Jeju island, KoreaOrganizer:\u30fb The Korean Information Display […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[1],"tags":[],"class_list":["post-1541","post","type-post","status-publish","format-standard","hentry","category-news"],"acf":[],"aioseo_notices":[],"aioseo_head":"\n\t\t\n\t\n\t\n\t\n\t\n\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t