{"id":52,"date":"2022-05-21T16:24:39","date_gmt":"2022-05-21T07:24:39","guid":{"rendered":"https:\/\/www.nissin-ion.co.jp\/en\/?page_id=52"},"modified":"2022-10-18T14:19:35","modified_gmt":"2022-10-18T05:19:35","slug":"history","status":"publish","type":"page","link":"https:\/\/www.nissin-ion.co.jp\/en\/crp\/history\/","title":{"rendered":"History"},"content":{"rendered":"
\n
\n
\n
\n
\n\n

A technology partnership is formed with Nissin Electric Co., Ltd. And HVEE (High Voltage Engineering Europe).<\/p>\n\n<\/dd>\n <\/dl>\n <\/div>\n<\/div>\n\n\n

\n
\n
\n
\n
\n\n

Production of ion implanter began.<\/p>\n\n<\/dd>\n <\/dl>\n <\/div>\n<\/div>\n\n\n

\n
\n
\n
\n
\n\n

200-kV medium-current ion implanter is developed.<\/p>\n\n<\/dd>\n <\/dl>\n <\/div>\n<\/div>\n\n\n

\n
\n
\n
\n
\n\n

Western Electric (now AT&T) technology is adopted for 30-kV high-current ion implanters.<\/p>\n\n<\/dd>\n <\/dl>\n <\/div>\n<\/div>\n\n\n

\n
\n
\n
\n
\n\n

The NC-20C, a 200-kV medium-current ion implanter (with belt conveyor end station), is developed.<\/p>\n\n<\/dd>\n <\/dl>\n <\/div>\n<\/div>\n\n\n

\n
\n
\n
\n
\n\n

The PR-200, a 200-kV high-current ion implanter, is developed.<\/p>\n\n<\/dd>\n <\/dl>\n <\/div>\n<\/div>\n\n\n

\n
\n
\n
\n
\n\n

The Ion Equipment Division is established.<\/p>\n\n<\/dd>\n <\/dl>\n <\/div>\n<\/div>\n\n\n

\n
\n
\n
\n
\n\n

The NH-20SD, a fully-automatic, dual end station for the NH-20S medium-current ion implanter, is released.<\/p>\n\n<\/dd>\n <\/dl>\n <\/div>\n<\/div>\n\n\n

\n
\n
\n
\n
\n\n

The PR-80, an 80-kV high-current ion implanter, is released.<\/p>\n\n<\/dd>\n <\/dl>\n <\/div>\n<\/div>\n\n\n

\n
\n
\n
\n
\n\n

Production moves to the new Kuze Plant, and the rotational implantation end station is developed.<\/p>\n\n<\/dd>\n <\/dl>\n <\/div>\n<\/div>\n\n\n

\n
\n
\n
\n
\n\n

The NH-20SR, a new medium-current ion implanter, is released.<\/p>\n\n<\/dd>\n <\/dl>\n <\/div>\n<\/div>\n\n\n

\n
\n
\n
\n
\n\n

The PR-80A, a new high-current ion implanter, and the NH-20SDR, a new dual end station, are released.
The ion implanter business for manufacturing Flat Panel Display is launched.<\/p>\n\n<\/dd>\n <\/dl>\n <\/div>\n<\/div>\n\n\n

\n
\n
\n
\n
\n\n

The NH-20SP, an 8-inch parallel beam medium-current ion implanter, is developed.
Deliveries of the NH-40SR, a 400-kV medium-current ion implanter for mass production, is delivered.<\/p>\n\n<\/dd>\n <\/dl>\n <\/div>\n<\/div>\n\n\n

\n
\n
\n
\n
\n\n

The first ion implanter (ion doping machine) for manufacturing low-temperature polycrystalline silicon TFT (LTPS-TFT) displays is delivered.<\/p>\n\n<\/dd>\n <\/dl>\n <\/div>\n<\/div>\n\n\n

\n
\n
\n
\n
\n\n

The EXCEED8000, an 8-inch high-current ion implanter, is developed.<\/p>\n\n<\/dd>\n <\/dl>\n <\/div>\n<\/div>\n\n\n

\n
\n
\n
\n
\n\n

The company receives the Ichimura Industrial Award for its medium-current ion implanter with a rotating implantation mechanism.<\/p>\n\n<\/dd>\n <\/dl>\n <\/div>\n<\/div>\n\n\n

\n
\n
\n
\n
\n\n

The EXCEED2000, a new medium-current ion implanter, is developed.
The NH-50SR, a 500-kV medium-current ion implanter for mass production, is developed.<\/p>\n\n<\/dd>\n <\/dl>\n <\/div>\n<\/div>\n\n\n

\n
\n
\n
\n
\n\n

Full-scale deliveries of ion implanters (ion doping machines) for manufacturing LTPS-TFT displays are commenced.<\/p>\n\n<\/dd>\n <\/dl>\n <\/div>\n<\/div>\n\n\n

\n
\n
\n
\n
\n\n

Nissin Electric Europe Limited is established in the UK (Scotland).<\/p>\n\n<\/dd>\n <\/dl>\n <\/div>\n<\/div>\n\n\n

\n
\n
\n
\n
\n\n

The EXCEED2000A, an updated 8-inch parallel beam medium-current ion implanter, is developed and released.
Deliveries of the ID5600 and ID6700 ion implanters (ion doping machines) for manufacturing LTPS-TFT displays are commenced.<\/p>\n\n<\/dd>\n <\/dl>\n <\/div>\n<\/div>\n\n\n

\n
\n
\n
\n
\n\n

Customer evaluations of the EXCEED2300, an ion implanter for 300mm wafers, are commenced.
Production control transferred from Nissin Electric Co., Ltd., and Nissin Ion Equipment Co., Ltd. is established.<\/p>\n\n<\/dd>\n <\/dl>\n <\/div>\n<\/div>\n\n\n

\n
\n
\n
\n
\n\n

Deliveries of the EXCEED2300, an ion implanter for mass production of 300mm wafers, are commenced.<\/p>\n\n<\/dd>\n <\/dl>\n <\/div>\n<\/div>\n\n\n

\n
\n
\n
\n
\n\n

Nissin Allis Union Ion Equipment Co., Ltd., a joint venture company, is established in Taiwan.
A representative office is established in Shanghai, China.<\/p>\n\n<\/dd>\n <\/dl>\n <\/div>\n<\/div>\n\n\n

\n
\n
\n
\n
\n\n

Nissin Ion Korea Co., Ltd., a subsidiary company, is established in South Korea.
Nissin Allis Ion Equipment (Shanghai) Co., Ltd., a subsidiary company, is established in Shanghai, China.
The Nissin Ion Equipment Co., Ltd. Singapore Branch is established.<\/p>\n\n<\/dd>\n <\/dl>\n <\/div>\n<\/div>\n\n\n

\n
\n
\n
\n
\n\n

Capital increased from 490 to 1,500 million yen.<\/p>\n\n<\/dd>\n <\/dl>\n <\/div>\n<\/div>\n\n\n

\n
\n
\n
\n
\n\n

The EXCEED3000AH, a new ion implanter for 300mm wafers, is released.
Deliveries of the iG4, a new ion implanter for manufacturing LTPS-TFT displays with 4.5th-generation substrate size (730 mm \u00d7 920 mm), are commenced.<\/p>\n\n<\/dd>\n <\/dl>\n <\/div>\n<\/div>\n\n\n

\n
\n
\n
\n
\n\n

The Shiga Plant \/ Plasma Technology R&D Center is established in Koka city, Shiga Prefecture.
Sales rights related to production control are transferred from Nissin Electric Co., Ltd.<\/p>\n\n<\/dd>\n <\/dl>\n <\/div>\n<\/div>\n\n\n

\n
\n
\n
\n
\n\n

The EXCEED9600A, an ion implanter for 300mm wafers with an implantation energy range expanded to a maximum of 960 KeV, is released.<\/p>\n\n<\/dd>\n <\/dl>\n <\/div>\n<\/div>\n\n\n

\n
\n
\n
\n
\n\n

The CLARIS, a hybrid ion implanter that utilizes the world\u2019s first cluster ion beam, is released.<\/p>\n\n<\/dd>\n <\/dl>\n <\/div>\n<\/div>\n\n\n

\n
\n
\n
\n
\n\n

Nissin Ion Equipment USA, Inc. is established as a wholly-owned subsidiary in Texas, USA.
Deliveries of the IMPHEAT, a high-temperature implanter for power semiconductors, are commenced.<\/p>\n\n<\/dd>\n <\/dl>\n <\/div>\n<\/div>\n\n\n

\n
\n
\n
\n
\n\n
  • Nissin Ion Hightech (Yangzhou) Co., Ltd. is established as a wholly-owned production subsidiary in Yangzhou, Jiangsu Province, China.<\/li>
  • The iG5, the world\u2019s first ion implanter for manufacturing LTPS-TFT displays with 5.5th-generation substrate size (1,300 mm \u00d7 1,500 mm), is developed and delivered.<\/li>
  • The iG6, the world\u2019s first ion implanter for manufacturing LTPS-TFT displays with 6th-generation substrate size (1,500 mm \u00d7 1,800 mm), is developed and delivered.<\/li>
  • Building No. 2 is added at the Shiga Plant.<\/li>
  • The R&D Center is established at Nissin Ion Equipment USA, Inc., (a subsidiary in the US), and a business center is established in Boston, Massachusetts, USA.<\/li><\/ul>\n\n<\/dd>\n <\/dl>\n <\/div>\n<\/div>\n\n\n
    \n
    \n
    \n
    \n
    \n\n

    Deliveries of the BeyEX(-H), an ion implanter for semiconductor, is commenced.
    Deliveries of the EXCEED3000AH-8C, an ion implanter for semiconductors, are commenced.<\/p>\n\n<\/dd>\n <\/dl>\n <\/div>\n<\/div>\n\n\n

    \n
    \n
    \n
    \n
    \n\n

    Building No. 3 is added at the Shiga Plant.<\/p>\n\n<\/dd>\n <\/dl>\n <\/div>\n<\/div>\n\n\n

    \n
    \n
    \n
    \n
    \n\n

    Deliveries of the EXCEED400HY, a hydrogen implanter for VCSELs, is commenced.<\/p>\n\n<\/dd>\n <\/dl>\n <\/div>\n<\/div>\n\n\n

    \n
    \n
    \n
    \n
    \n\n

    The IMPHEAT-II, a new high-temperature implanter for power semiconductors, is developed.<\/p>\n\n<\/dd>\n <\/dl>\n <\/div>\n<\/div>\n\n\n

    \n
    \n
    \n
    \n
    \n\n

    An office building is added at the Shiga Plant.
    Relocated a function of head office to Toji Office.<\/p>\n\n<\/dd>\n <\/dl>\n <\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":"","protected":false},"author":2,"featured_media":53,"parent":38,"menu_order":4,"comment_status":"closed","ping_status":"closed","template":"","meta":{"_acf_changed":false,"footnotes":""},"class_list":["post-52","page","type-page","status-publish","has-post-thumbnail","hentry"],"acf":[],"aioseo_notices":[],"aioseo_head":"\n\t\t\n\t\n\t\n\t\n\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t