{"id":510,"date":"2022-06-15T15:57:59","date_gmt":"2022-06-15T06:57:59","guid":{"rendered":"https:\/\/www.nissin-ion.co.jp\/en\/?page_id=510"},"modified":"2022-10-05T12:51:03","modified_gmt":"2022-10-05T03:51:03","slug":"ig4","status":"publish","type":"page","link":"https:\/\/www.nissin-ion.co.jp\/en\/prd\/ion-implanter\/id\/ig4\/","title":{"rendered":"iG4"},"content":{"rendered":"\n<div class=\"wp-block-columns is-layout-flex wp-container-core-columns-is-layout-1 wp-block-columns-is-layout-flex\">\n<div class=\"wp-block-column is-layout-flow wp-block-column-is-layout-flow\">\n<figure class=\"wp-block-image size-full\"><img loading=\"lazy\" decoding=\"async\" width=\"640\" height=\"420\" src=\"https:\/\/www.nissin-ion.co.jp\/en\/wp-content\/uploads\/2022\/06\/iG4.jpg\" alt=\"iG4\" class=\"wp-image-381\"\/><\/figure>\n<\/div>\n\n\n\n<div class=\"wp-block-column is-layout-flow wp-block-column-is-layout-flow\"><div class=\"block-custom_prd-int_text\">\n  <div class=\"block_inner block-custom_prd-int_text_inner\">\n    \n\n<h2 class=\"wp-block-heading\">Ion implanter for FPD manufacturing<\/h2>\n\n\n\n<h3 class=\"wp-block-heading\">iG4<\/h3>\n\n\n\n<p class=\"pc\">We provide ion implanters that are indispensable for the electrical characteristics control process in the manufacture of thin-film resistors for driving high-definition displays, as typified by low-temperature polysilicon thin-film transistors.<\/p>\n\n\n\n<p class=\"sp\">We provide ion implanters that are indispensable for the electrical characteristics control process in the manufacture of thin-film resistors for driving high-definition displays, as typified by low-temperature polysilicon thin-film transistors.<\/p>\n\n\n\n<h4 class=\"wp-block-heading\">Merit<\/h4>\n\n\n\n<ul class=\"pc wp-block-list\"><li>High equipment reliability as recognized at mass production plants around the world<\/li><li>A single implanter can handle a variety of dopants and a wide implantation range (channels and source\/drain regions).<\/li><li>High precision and high reproducibility are achieved by our proprietary high-precision ion beam measurement system and high-precision glass substrate scanning mechanism.<\/li><li>Rapid switching between different dopant recipes using proprietary technology<\/li><li>High-purity implantation through proprietary technology for mass separation impurity removal<\/li><li>Suppression of glass substrate temperature increases during implantation by means of a dual platen mechanism<\/li><li>Mitigation of glass substrate charging (electrostatic discharge damage) during implantation by means of a charge neutralization system<\/li><\/ul>\n\n\n\n<ul class=\"sp wp-block-list\"><li>High equipment reliability as recognized at mass production plants around the world<\/li><li>A single implanter can handle a variety of dopants and a wide implantation range (channels and source\/drain regions).<\/li><li>High precision and high reproducibility are achieved by our proprietary high-precision ion beam measurement system and high-precision glass substrate scanning mechanism.<\/li><li>Rapid switching between different dopant recipes using proprietary technology<\/li><li>High-purity implantation through proprietary technology for mass separation impurity removal<\/li><li>Suppression of glass substrate temperature increases during implantation by means of a dual platen mechanism<\/li><li>Mitigation of glass substrate charging (electrostatic discharge damage) during implantation by means of a charge neutralization system<\/li><\/ul>\n\n\n\n<h4 class=\"wp-block-heading\">Main Specifications<\/h4>\n\n\n\n<p><strong>Available glass substrate sizes<\/strong><br>730 mm x 920 mm<\/p>\n\n\n\n<p><strong>Dopants (ion species)<\/strong><br>B<sup>+<\/sup>\u3001P<sup>+<\/sup><\/p>\n\n\n\n<p><strong>Ion beam energy<\/strong><br>10\u201380 keV<\/p>\n\n\n\n<h4 class=\"wp-block-heading\">Track Record<\/h4>\n\n\n\n<p class=\"pc\">Delivered to display panel manufacturers and laboratories in Japan, China, South Korea, and Taiwan.<\/p>\n\n  <\/div>\n<\/div>\n<\/div>\n<\/div>\n\n\n<div class=\"block-contact-btn-block\">\n  <div class=\"block_inner block-contact-btn-block_inner\">\n    <a href=\"\/en\/contact\"><i class=\"fas fa-angle-right\"><\/i>Contact us by email<\/a>\n  <\/div>\n<\/div>\n","protected":false},"excerpt":{"rendered":"","protected":false},"author":2,"featured_media":0,"parent":325,"menu_order":18,"comment_status":"closed","ping_status":"closed","template":"","meta":{"_acf_changed":false,"footnotes":""},"class_list":["post-510","page","type-page","status-publish","hentry"],"acf":[],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/www.nissin-ion.co.jp\/en\/wp-json\/wp\/v2\/pages\/510"}],"collection":[{"href":"https:\/\/www.nissin-ion.co.jp\/en\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.nissin-ion.co.jp\/en\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.nissin-ion.co.jp\/en\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.nissin-ion.co.jp\/en\/wp-json\/wp\/v2\/comments?post=510"}],"version-history":[{"count":12,"href":"https:\/\/www.nissin-ion.co.jp\/en\/wp-json\/wp\/v2\/pages\/510\/revisions"}],"predecessor-version":[{"id":1336,"href":"https:\/\/www.nissin-ion.co.jp\/en\/wp-json\/wp\/v2\/pages\/510\/revisions\/1336"}],"up":[{"embeddable":true,"href":"https:\/\/www.nissin-ion.co.jp\/en\/wp-json\/wp\/v2\/pages\/325"}],"wp:attachment":[{"href":"https:\/\/www.nissin-ion.co.jp\/en\/wp-json\/wp\/v2\/media?parent=510"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}