{"id":355,"date":"2022-06-10T15:51:30","date_gmt":"2022-06-10T06:51:30","guid":{"rendered":"https:\/\/www.nissin-ion.co.jp\/en\/?page_id=355"},"modified":"2026-04-06T15:22:48","modified_gmt":"2026-04-06T06:22:48","slug":"ios","status":"publish","type":"page","link":"https:\/\/www.nissin-ion.co.jp\/en\/prd\/ios\/","title":{"rendered":"Ion Implantation Services"},"content":{"rendered":"
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\n About Our Ion Implantation Services<\/span>\n ABOUT<\/span>\n <\/h2>\n <\/div>\n<\/div>\n\n\n\n
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Nissin Ion Equipment Co., Ltd. provides high-quality ion implantation services powered by our own state-of-the-art, in-house developed ion implanters. We support a wide range of\u3000applications, from cutting-edge 300\u202fmm silicon devices to advanced power semiconductors and optoelectronic devices, including:<\/p>\n\n\n\n

\u3000\u2022\u3000High-temperature ion implantation for SiC and GaN devices<\/p>\n\n\n\n

\u3000\u2022\u3000Hydrogen ion implantation for VCSEL applications<\/p>\n\n\n\n

\u3000\u2022\u3000Implantation for small-diameter wafers and small samples<\/p>\n\n\n\n

All processes are performed in a Class 1 clean environment, equivalent to our customers\u2019 LSI production lines, ensuring the highest level of process cleanliness and reliability.<\/p>\n\n\n\n

We also have ion beam etching equipment and provide etching processing services.<\/p>\n<\/div>\n<\/div>\n\n\n\n

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The Class 1<\/strong> clean tunnel at our Kuze Plant<\/figcaption><\/figure>\n<\/div>\n\n\n\n
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In addition to this, we offer comprehensive evaluation capabilities, including annealing, sheet resistance measurement, dose monitoring, and particle inspection. This integrated environment allows us to support process development, device evaluation, and early-stage R&D, especially for advanced technology nodes.<\/p>\n\n\n\n

We invite you to leverage our ion implantation expertise to accelerate your device development.<\/p>\n<\/div>\n<\/div>\n\n\n\n

Fields Served by Our Ion Implantation Services<\/h2>\n\n\n\n
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Silicon devices<\/p>\n

High-precision, high-purity ion implantation<\/p>\n <\/div>\n<\/div>\n\n\n

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SiC, GaN, and Ga\u2082O\u2083 power devices<\/p>\n

Al\u207a, Si\u207a, and Mg\u207a implantation
\nHigh-temperature implantation up to 600\u00b0C possible<\/p>\n <\/div>\n<\/div>\n\n\n

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GaN and SiC Smart Cut wafers<\/p>\n

Wafer stripping through high-concentration hydrogen implantation<\/p>\n <\/div>\n<\/div>\n\n\n

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VCSEL (Vertical cavity surface emitting LASER)<\/p>\n

High-energy hydrogen implantation<\/p>\n <\/div>\n<\/div>\n\n\n

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Cutting-edge process development<\/p>\n

Support for new device architectures and novel processes using specialty ion species.<\/p>\n <\/div>\n<\/div>\n<\/div><\/div>\n\n\n

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\n Why Choose Nissin?<\/span>\n MERIT<\/span>\n <\/h2>\n <\/div>\n<\/div>\n\n\n\n

High-quality implantation services<\/h2>\n\n\n\n