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Ion Implanter for Semiconductor Process

CLARIS®

Cluster Ion Implanter for next generation devices

CLARIS®

Features

Precise high-quality cluster ion implantation

  • High beam current at low energy
  • Precise beam control

CLARIS process advantage benefits

  • Ultra shallow junction formation
  • High productivity replacing Ge + C with C7/C16
  • Self-amorphization
  • High activation
  • Diffusion control
  • Defects suppression
  • NMOS strain engineering

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