High-Quality Implantation Service
- Nissin offer ion implantation using our cutting edge technology that is compatible with the most advanced implantation processes. (Wafer size: 300 mmΦ)
- Nissin offer the high quality ion implantation that is required in the most advanced implantation processes.
- Nissin offer implantation services in the clean environment of our "Class 1" clean tunnel.
- Nissin offer support for the development of nanotechnology node equipment, implantation testing, etc.
- Parallel beam
- ±0.5° or lower beam parallelism control function
- Uniformity check function
- Perfect energy contamination elimination function
- Load Port FOUP
Docking the end station to the clean tunnel has enabled the implantation process to be performed in a Class 1 environment.
We provide an environment that can be used as a part of our customers' LSI production line.